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Investigation of the lateral spread of erbium ions implanted in silicon crystal |
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| Authors: | Qin Xi-Feng Chen Ming Wang Xue-Lin Liang Yi and Zhang Shao-Mei |
| Institution: | School of Physics, Shandong University, Jinan 250100, China; College of Science, Shandong Jian Zhu University, Jinan 250101, China;School of Physics, Shandong University, Jinan 250100, China;School of Physics, Shandong University, Jinan 250100, China; State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;College of Science, Shandong Jian Zhu University, Jinan 250101, China;School of Physics, Shandong University, Jinan 250100, China |
| Abstract: | The erbium ions at energy of 400 keV and dose of 5×1015 ions/cm2 were implanted into silicon single crystals at room temperature at the angles of 0°, 45°and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM'98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes. |
| Keywords: | erbium ion implantation silicon Rutherford backscattering technique lateral spread |
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