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Samarium-monosulfide-based semiconductor strain gages for spacecraft-strain transformation
Authors:N M Volodin  Yu N Mishin  V V Kaminskii  Yu V Zakharov
Institution:1. Lavochkin Research and Production Association, ul. Leningradskaya 24, Khimki, Moscow oblast, 141400, Russia
2. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg, Russia
3. Moscow Institute of Radio Engineering, Electronics, and Automation, Moscow, Russia
Abstract:The theoretical basis of the measured strain transform by strain gages made of samarium monosulfide and other semiconductors in increments of electrical resistance is considered. Specific structures of semiconductor strain gages based on samarium monosulfide are presented.
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