CMOS Detector Technology |
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Authors: | Alan Hoffman Markus Loose Vyshnavi Suntharalingam |
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Institution: | (1) Raytheon Vision Systems, Goleta, USA;(2) Rockwell Scientific Company, Thousand Oaks, USA;(3) MIT Lincoln Laboratory, Lexington, USA |
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Abstract: | An entry level overview of state-of-the-art CMOS detector technology is presented. Operating principles and system architecture are explained in comparison to the well-established CCD technology, followed by a discussion of important benefits of modern CMOS-based detector arrays. A number of unique CMOS features including different shutter modes and scanning concepts are described. In addition, sub-field stitching is presented as a technique for producing very large imagers. After a brief introduction to the concept of monolithic CMOS sensors, hybrid detectors technology is introduced. A comparison of noise reduction methods for CMOS hybrids is presented. The final sections review CMOS fabrication processes for monolithic and vertically integrated image sensors. |
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Keywords: | APS active pixel sensor CCD CMOS focal plane array HgCdTe hybrid image sensor InSb three-dimensionally stacked circuits vertical integration |
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