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| N型氮化镓的结构和光电导特性 | |
| 引用本文： | 艾子萍,刘云燕,等.N型氮化镓的结构和光电导特性[J].岩矿测试,2001,20(3):195-198. |
| 作者姓名： | 艾子萍 刘云燕 |
| 作者单位： | 1. 山东大学实验中心, 2. 淄博学院基础部, 3. 山东大学物理系, |
| 基金项目： | 山东自然科学基金项目(Y96A12016) |
| 摘 要： | 采用透射电镜高分辨反射电子衍射，扫描电镜形貌观察，X射线衍射等不同方法测试了不同Mg含量的N型氮化镓薄膜的结构。几种测定方法的比较表明，高分辨反射电子衍射是确定厚衬底的薄膜结构的快速而简便的方法，材料的杂质和缺陷是影响其光电导性质的重要因素。 |
| 关 键 词： | 透射电镜 高分辨反射电子衍射 扫描电镜 X射线衍射 结构 光电导特性 N型氮化镓 半导体材料 |
| 文章编号： | 0254-5357(2001)03-0195-04 |
| 修稿时间： | 2000年10月23 |
The Structure and Photoconductivity of N-Type GaN |
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| AI Zi ping,LIU Yun yan,ZHANG De heng.The Structure and Photoconductivity of N-Type GaN[J].Rock and Mineral Analysis,2001,20(3):195-198. | |
| Authors: | AI Zi ping LIU Yun yan ZHANG De heng |
| Institution: | AI Zi ping 1,LIU Yun yan 2,ZHANG De heng 3 |
| Abstract: | The structural properties of Mg doped GaN films with different Mg concentrations deposited by MOCVD have been measured by TEM with high resolution reflective electron diffraction, SEM and X ray diffraction. The obtained results show that the high resolution reflective electron diffraction is the simplest and the most efficient method for determining the crystallization of the samples with thick substrates. The impurities and defects are main factors that affect the photo conductivity and electric conductivity of N tyep GaN. |
| Keywords: | transmission electron microscope (TEM) high resolution reflective electron diffraction scanning electron microscope(SEM) X ray diffraction |
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