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制备工艺对低温烧结Ni-Cu-Zn铁氧体/BaTiO_3复合材料性能的影响
引用本文:凌味未,许诚昕,马文英,聂海,陈祝.制备工艺对低温烧结Ni-Cu-Zn铁氧体/BaTiO_3复合材料性能的影响[J].成都信息工程学院学报,2014(2):117-120.
作者姓名:凌味未  许诚昕  马文英  聂海  陈祝
作者单位:成都信息工程学院通信工程学院,四川成都610225
基金项目:国家自然科学基金资助项目(61201094);感谢成都信息工程学院中青年学术带头人科研基金项目(J201302)对本文的资助
摘    要:采用2种复合工艺流程在900°C和950°C制备了适用于低温共烧陶瓷(LTCC)工艺的Ni-Cu-Zn铁氧体/BaTiO3复合材料。对比研究了不同工艺流程下,烧结温度及助剂用量变化对复合体系烧结性能和电磁性能的影响。900°C烧结时,在铁氧体预烧前添加BaTiO3(工艺流程Ⅱ)制备的复合材料比在铁氧体预烧后添加BaTiO3(工艺流程Ⅰ)制备的复合材料有更高的烧结密度(5.40g/cm3)和Snoek乘积(5.56GHz);950°C烧结时,工艺流程Ⅱ制备的复合材料的介电性能优于工艺流程Ⅰ制备的。

关 键 词:复合材料  LTCC  工艺流程  磁性能  介电性能

Influence of Preparation Process on Properties of Low Temperature Fired Ni-Cu-Zn Ferrite/BaTiO3 Composite Materials
LING Wei-wei,XU Cheng-xin,MA Wen-ying,NIE Hai,CHEN Zhu.Influence of Preparation Process on Properties of Low Temperature Fired Ni-Cu-Zn Ferrite/BaTiO3 Composite Materials[J].Journal of Chengdu University of Information Technology,2014(2):117-120.
Authors:LING Wei-wei  XU Cheng-xin  MA Wen-ying  NIE Hai  CHEN Zhu
Institution:(School of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, China)
Abstract:Two kinds of preparation processes were carried out to synthesize Ni-Cu-Zn ferrite/BaTiO3 composites which can be applied in low temperature cofired ceramic (LTCC) technology at 900℃ and 950℃.Influence of sintering temperature,additives amount on the sintering properties and electromagnetic properties of the composites had been studied during different preparation process.When sintered at 900℃,the higher density (5.40g/cm3) and Snoek's product (5.56GHz) can be obtained in the composites prepared by adding BaTiO3 before presintering of the ferrite (preparation process Ⅱ),in contrast to the composites prepared by adding BaTiO3 after presintering of the ferrite (preparation process Ⅰ).When sintered at 950℃,the dielectric properties of the composites synthesized by the preparation process Ⅱ are better than that synthesized by the preparation process Ⅰ.
Keywords:composite materials  LTCC  preparation process  magnetic properties  dielectric properties
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