| 二维GaAs 基光子晶体微腔的制作与光谱特性分析 |
| |
| 引用本文： | 彭银生,叶小玲,徐波,牛洁斌,贾锐,王占国,梁松,杨晓红. 二维GaAs 基光子晶体微腔的制作与光谱特性分析[J]. 海洋学报, 2010, 32(10): 7073-7077 |
| |
| 作者姓名： | 彭银生 叶小玲 徐波 牛洁斌 贾锐 王占国 梁松 杨晓红 |
| |
| 作者单位： | 中国科学院半导体研究所, 半导体材料重点实验室, 北京 100083; 浙江工业大学信息工程学院,杭州 310023;中国科学院半导体研究所, 半导体材料重点实验室, 北京 100083;中国科学院半导体研究所, 半导体材料重点实验室, 北京 100083;中国科学院微电子研究所, 北京 100029;中国科学院微电子研究所, 北京 100029;中国科学院半导体研究所, 半导体材料重点实验室, 北京 100083;中国科学院半导体研究所, 半导体材料重点实验室, 北京 100083;中国科学院半导体研究所, 集成光电子国家重点实验室, 北京 100083 |
| |
| 基金项目： | 国家重点基础研究发展计划(批准号: 2006CB604904, 2006CB604908)和国家自然科学基金(批准号: 60676029, 60990315, 60625402)资助的课题. |
| |
| 摘 要： | 研究了以InAs量子点为有源区的二维GaAs基光子晶体微腔的设计与制作,测试并分析了室温下微腔的光谱特性.观察到了波长约为1137 nm,谱线半高宽度约为1 nm的尖锐低阶谐振模式发光峰.我们比较了不同刻蚀条件下光子晶体微腔的发光谱线,结果表明空气孔洞截面的垂直度是影响光子晶体微腔发光特性的重要因素之一.通过调节干法刻蚀工艺,改变空气孔半径与晶格常数的比率,可以在较大范围内调节谐振模式发光峰位置,达到谐振模式与量子点发光峰调谐的目的.
|
| 关 键 词： | 光子晶体微腔 GaAs 量子点 谐振模式 |
Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities |
| |
| Peng Yin-Sheng,Ye Xiao-Ling,Xu Bo,Niu Jie-Bin,Jia Rui,Wang Zhan-Guo,Liang Song and Yang Xiao-Hong. Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities[J]. Acta Oceanologica Sinica (in Chinese), 2010, 32(10): 7073-7077 |
| |
| Authors: | Peng Yin-Sheng Ye Xiao-Ling Xu Bo Niu Jie-Bin Jia Rui Wang Zhan-Guo Liang Song Yang Xiao-Hong |
| |
| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China; College of Information Engineering, Zhejang University of Technology, Hangzhou 310023, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Institute of Micro-electronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Micro-electronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China |
| |
| Abstract: | This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition,the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode. |
| |
| Keywords: | photonic crystal nanocavity GaAs quantum dot resonant cavity modes |
|
| 点击此处可从《海洋学报》浏览原始摘要信息 |
|
点击此处可从《海洋学报》下载全文 |
|
