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电离层E层和F层中的日出效应
引用本文:張肇先. 电离层E层和F层中的日出效应[J]. 地球物理学报,1963,12(01): 12-31,
作者姓名:張肇先
作者单位:中国科学院地球物理研究所
摘    要:本文对德意志民主共和国Juliusruh/Rügen电离层站(54°38′N,13°23′E),在1958年11月至1959年10月期間,日出前后一分钟測量一次的頻高图記录进行了分析。可以确认,E2层是一个純受太阳紫外輻射所控制的正常层次;該层每天开始电离时的太阳高度年变化是沒有規律的,而F层每天开始电离时的太阳高度却具有有規律的年变化。对这些統計分析結果进行理論研究,可以发現无論对F层而言,还是对E层而言,均不存在能够强烈吸收有关太阳紫外輻射的遮蔽层。决定F层每天开始电离时間的机制,是高层大气随季节不同而膨胀或收縮。在同样的太阳高度下,E1层和E2层的电子密度主要由运动項所决定,該項的大小和电离层飘移速度的东西分量有紧密的关系。此外,还估計了各个月份的E1层极大电子生成率,以及与E1层有关的太阳輻射的强度。对E2层的成因也作了一些估計。

关 键 词:电离层   太阳高度   电子密度   年变化   日变化   日出   临界频率   效应   高层大气   地球物理学

THE SUNRISE EFFECTS IN THE IONOSPHERIC E AND F LAYERS
DCHANG DCHAO-SHIEN. THE SUNRISE EFFECTS IN THE IONOSPHERIC E AND F LAYERS[J]. Chinese Journal of Geophysics (in Chinese),1963,12(01): 12-31,
Authors:DCHANG DCHAO-SHIEN
Affiliation:Institute of Geophysics and Meterology,Academia Sinica
Abstract:The ionograms of Station Juliusruh/Rugen (54°38′N,13°23′S) of German Democratic Republic,measured once per minute by sunrise from November 1958 to October 1959 are analysed. It is concluded,that the E2 layer is a normal layer,controled purely by solar ultraviolet radiation; the annual variation of the solar height at the time of first ionization of the E2 layer is irregular,whereas this solar height of the F layer has a regular annual variation. The theoretical study for these results shows the non-existance of a screening layer,absorbing strongly the relevant solar ultraviolet radiations,for both the F and E layers.The mechanism causing the annual variation of the first ionisation for the F layer is the expansion and/or the contraction of the upper atmosphere depending upon the seasons. Under circumstances of the same solar zenit distances,the electron densities of the E1 and E2 layers are determined predominently by the movement term. The magnitude of this term relates closely with the east-west component of the ionospheric drift velocity,in addition,the maxima electron production rates of the E1 layer for all months,as well as the extra terrestrial intensities of the solar Lβ-radiation related to this layer are calculated. The cause is also estimated of the formation of the E2 layer.
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