1D inversion of DC resistivity data using a quality-based truncated SVD

Many DC resistivity inversion schemes use a combination of standard iterative least-squares and truncated singular value decomposition (SVD) to optimize the solution to the inverse problem. However, until quite recently, the truncation was done arbitrarily or by a trial-and-error procedure, due to the lack of workable guidance criteria for discarding small singular values. In this paper we present an inversion scheme which adopts a truncation criterion based on the optimization of the total model variance. This consists of two terms: (i) the term associated with the variance of statistically significant principal components, i.e. the standard model estimate variance, and (ii) the term associated with statistically insignificant principal components of the solution, i.e. the variance of the bias term. As an initial model for the start of iterations, we use a multilayered homogeneous half-space whose layer thicknesses increase logarithmically with depth to take into account the decrease of the resolution of the DC resistivity technique with depth. The present inversion scheme has been tested on synthetic and field data. The results of the tests show that the procedure works well and the convergence process is stable even in the most complicated cases. The fact that the truncation level in the SVD is determined intrinsically in the course of inversion proves to be a major advantage over other inversion schemes where it is set by the user.