首页 | 本学科首页   官方微博 | 高级检索  
     检索      


An X-ray photoelectron and absorption spectroscopic investigation of the electronic structure of cubanite, CuFe2S3
Authors:Siew Wei Goh  Alan N Buckley  William M Skinner  Liang-Jen Fan
Institution:(1) School of Chemistry, The University of New South Wales, Sydney, NSW, 2052, Australia;(2) ARC Special Research Centre for Particle and Material Interfaces, Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA, 5095, Australia;(3) National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan;
Abstract:X-ray photoelectron and absorption spectra have been obtained for natural specimens of cubanite and compared with the corresponding spectra for chalcopyrite. Synchrotron X-ray photoelectron spectra of surfaces prepared by fracture under ultra-high vacuum revealed some clear differences for the two minerals, most notably those reflecting their different structures. In particular, the concentration of the low binding energy S species formed at cubanite fracture surfaces was approximately double that produced at chalcopyrite surfaces. However, the core electron binding energies for the two S environments in cubanite were not significantly different, and were similar to the corresponding values for the single environment in chalcopyrite. High binding energy features in the S 2p and Cu 2p spectra were not related to surface species produced either by the fracture or by oxidation, and most probably arose from energy loss due to inter-band excitation. Differences relating to the Fe electronic environments were detectable, but were smaller than expected from some of the observed physical properties and Mössbauer spectroscopic parameters for the two minerals. X-ray absorption and photoelectron spectra together with the calculated densities of states for cubanite confirmed an oxidation state of CuI in the mineral. It was concluded that the best formal oxidation state representation for cubanite is CuI(Fe2)VS 3 ?II .
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号