首页 | 本学科首页   官方微博 | 高级检索  
     检索      


The bedrock topography of the botany basin,New South Wales
Authors:B D Johnson  A D Albani  P C Rickwood  J W Tayton
Institution:1. School of Earth Sciences , Macquarie University , North Ryde, N.S.W., 2113;2. School of Applied Geology , University of New South Wales , Kensington, N.S.W., 2033
Abstract:The bedrock topography of the Botany Basin has been determined from seismic‐sparker records made in Botany Bay and Bate Bay, and from seismic‐refraction and gravity measurements on the Kurnell Peninsula. Supplementary information has been obtained from boreholes both on land and in the sea.

The Cooks and Georges Rivers formerly constituted the main drainage of the Basin and flowed generally southeastwards (beneath the present Kurnell Peninsula) and joined the Port Hacking River east of Cronulla. The depth of the bedrock channel of the former Georges River is 75–80 m b.s.l. at Taren Point, 90–95 m beneath the Kurnell Peninsula and 110–115 m at its junction with the Port Hacking River channel. The bedrock channel of the former Cooks River is about 30 m b.s.l. at Kyeemagh, its present entrance to Botany Bay, and it joined the Georges River at a location now 90 m b.s.l. beneath the Kurnell Peninsula.

A second drainage system existed in the north and east of Botany Bay and generated the present mouth beneath which the bedrock is now 110 m b.s.l. This channel followed a southeasterly course parallel to the present northern shore of Botany Bay and was separated from that of the ‘Cooks and Georges Rivers’ by a bedrock ridge which extended from beneath Sydney Airport to the northern extremity of the Kurnell Peninsula. Over much of its length this divide had a depth of about 30 m b.s.l.

The formation of the Kurnell Peninsula tombolo led to the diversion of the ‘Cooks/Georges River’ through the mouth of Botany Bay and subsequently led to the development of the bay. This change in the drainage system occurred when the sea was less than 30 m below the present sea level.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号