基于100 nm砷化镓pHEMT工艺的C波段宽带低噪声放大器芯片

作为射电天文接收机系统的关键器件, 低噪声放大器的噪声和增益性能对接收机系统的灵敏度有重要影响. 采用100nm砷化镓赝配高电子迁移率晶体管(pseudomorphic High Electron Mobility Transistor, pHEMT)lk工艺, 研制了一款可覆盖C波段(4--8GHz)的低噪声放大器(Low Noise Amplifier, LNA). 所设计的LNA采用3级共源级联放大拓扑结构, 栅极、漏极双电源供电. 常温下测试表明, 该LNA在4--8GHz频段内平均噪声温度为lk60K, 在5GHz处获得最低噪声温度50K, 通带内增益($31pm1.5$)dB, 输入输出回波损耗均优于10dB, 芯片面积为$2.1times1.1$mm², 可以应用于C波段射电天文接收机以及卫星通信系统等.

C Band Broadband LNA MMIC in 100 nm GaAs pHEMT

As the key component of radio astronomy receiver system, the noise and gain performance of Low Noise Amplifier (LNA) have important influence on the sensitivity of receiver system. In this paper, a broadband LNA which can cover the C-band (4--8GHz) is developed by using the 100nm gallium arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) technology. The amplifier adopts three-stage common source cascade amplifier topology and dual power supply structure. Measured results show that the average noise temperature of the amplifier is 60K in the frequency range of 4--8GHz with the lowest noise temperature of 50K being achieved at 5GHz. The gain is (31pm1.5)dB in the whole bandwidth and the input and output return loss is better than 10dB. The chip area is 2.1times1.1mm². This designed LNA can be used in the C-band radio astronomy receiver and satellite communication system.