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电阻率层析成像技术在琼东北活动断裂探测中的应用
引用本文:曹新文.电阻率层析成像技术在琼东北活动断裂探测中的应用[J].地质与勘探,2017,53(5):1001-1009.
作者姓名:曹新文
作者单位:1. 中国石油大学(北京)地球科学学院,北京 102249;中国地质科学院地质力学研究所,北京 100081;2. 中国地质科学院地质力学研究所,北京 100081;国土资源部新构造运动与地质灾害重点实验室,北京 100081;北京科技大学土木与资源学院,北京 100083;3. 中国地质科学院地质力学研究所,北京,100081
基金项目:中国地质调查局地质调查项目(DD20160269)和中央级公益性科研院所基本科研业务费专项(YYWF201615)联合资助
摘    要:琼东北1605年琼山地震发震的中心区域东寨港东侧发育多组近东西向和北西向的活动断裂,且均为隐伏断裂。为探明断裂的分布位置及其活动性,现采用电阻率层析成像技术将其中琼山-铺前断裂(F8)以及F7、F6、F5共四条,北西走向断裂作为此次探测目标断裂。结合前人水文钻孔资料和断裂分布,在珠溪河北岸和罗豆农场北侧部署了三条电法探测线,结果表明区域沉积地层在三条反演剖面上均可以划分出三层视电阻率梯度带,与钻孔资料对应较好。同样,视电阻率对已知四条活动断裂均有明显特征的低阻异常反映,除断裂F7的倾向解释存在争议外,其余三条断裂解释均得到钻孔验证。

关 键 词:电阻率层析成像技术  琼东北  琼山-铺前断裂  视电阻率
收稿时间:2017/4/12 0:00:00
修稿时间:2017/7/3 0:00:00

Application of the resistivity tomography method to detection of active faults Northeast of the Hainan Island
Cao Xin-wen.Application of the resistivity tomography method to detection of active faults Northeast of the Hainan Island[J].Geology and Prospecting,2017,53(5):1001-1009.
Authors:Cao Xin-wen
Abstract:In the northeastern Hainan island, where the 1605 Qiongshan earthquake occurred, there exist many nearly EW-trending and NW-tren-ding active faults, all of which are buried at depth. This work attempted to clarify the locations and geometries of these faults using the resistivity tomo-graphy method, focusing on four NW trending ones, i. e. , the Qiongshan-Puqian fault(F8),F7,F6,and F5. According to previous hydrological bore-hole data, three electrical survey lines were deployed on the north side of the Zhuxi River and LuoDou farm. The results show that regional sedimentary strata can be delineated by apparent resistivity gradient zones on three inversion profiles, respectively,well consistent with the borehole data. Meanwhile, obvious low-resistivity anomalies are present on the four known active faults,and except F7 tending to be controversial in explanation,the other three in-terpreted faults are all confirmed by drilling data.
Keywords:resistivity tomography method    northeast of Hainan island    Qiongshan-Puqian fault    apparent resistivity
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