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Al-related centers in relation to γ-irradiation
Authors:Pedro L. Guzzo  Fumiko Iwasaki  Hideo Iwasaki
Affiliation:Laboratoire de Chronométrie Electronique et Piézoélectricité Chemin de l'Epithaphe, 25030 Besan?on cedex, France, FR
Sobudai-Danchi 1-6-15-12, Sagamihara 228, Japan, JP
Abstract: The charge compensation problem for Si−Al substitution in Brazilian natural quartz is investigated in relation to γ-irradiation darkening response and impurity contents evaluated by atomic absorption spectrometry and infrared absorption spectroscopy. Al+3 in as-grown natural quartz is compensated by Li+ and H+ to form Al−Li and Al−OH centers. The content ratios (Al−Li)/(Al−OH) and Li/(broad OH band) depend on the environmental conditions of crystal growth and influence the formation of Al-hole centers due to γ-irradiation. Al−OH centers are the dominant Al-related centers in quartz from hydrothermal origin while Al−Li centers are dominant for that of pegmatitic origin. The formation of Al-hole centers is little in quartz with a high content of broad OH band which is from low temperature hydrothermal origin. Received May 23, 1995 / Revised, accepted May 8, 1996
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