Geometric consequences of ductile fabric development from brittle shear faults in mafic melt sheets: Evidence from the Sudbury Igneous Complex,Canada

Compared to felsic igneous rocks the genetic relationship between brittle and ductile fabric development and its influence on the geometry of deformed mafic melt sheets has received little attention in structural analyses. We explore these relationships using the Sudbury Igneous Complex (SIC) as an example. The SIC is the relic of a layered impact melt sheet that was transformed into a fold basin, the Sudbury Basin, during Paleoproterozoic deformation at the southern margin of the Archean Superior Province. We studied brittle and ductile strain fabrics on the outcrop and map scales in the southern Sudbury Basin, notably in the Norite and Quartz Gabbro layers of the SIC. Here, deformation is heterogeneous and occurred under variable rheological conditions, evident by the development of brittle shear fractures, brittle-ductile shear zones and pervasive ductile strain. The mineral fabrics formed under low- to middle greenschist-facies metamorphism, whereby brittle deformation caused hydrolytic weakening and ductile fabric development. Principal strain axes inferred from all structural elements are collinear and point to a single deformation regime that led to thinning of SIC layers during progressive deformation. Ductile fabric development profoundly influenced the orientation of SIC material planes, such as lithological contacts and magmatic mineral fabrics. More specifically, these planar structural elements are steep where the SIC underwent large magnitudes of thinning, i.e., in the south limb of the Sudbury Basin. Here, the actual tilt component of material planes is likely smaller than its maximum total rotation (60°) inferred from inclined igneous layering in the Norite. Our field-based study shows that ductile fabric development from brittle faults can have a profound influence on the rotational components of primary material planes in deformed igneous melt sheets.