Exoelectron spectroscopy of traps in surface layers of phenakite and quartz

The possibilities of exoelectron spectroscopy to investigate defects in dielectrics are demonstrated for phenakite Be₂SiO₄, its structural analogs Zn₂ SiO₄, Be₂GeO₄, solid solutions Be₂Si_1?x Ge _x O₄ (x=0÷1) and α-quartz. Emission maxima at 330 and 670 K in phenakite have been found to be due to GeO₄]^5? andE' centers, respectively. Structural disturbances in the silicon and oxygen positions have been shown to control the exoemission activity of the crystals. Radiation induced decrease of exoemission activity connected with generation ofE' centers by neutron irradiation has been discovered. The energy level scheme of active centers in the subsurface region of Be₂SiO₄ has been established.