PTPD／Alq3异质结掺杂器件载流子的复合与发射

以新型的空穴传输材料PTPD（三苯基二胺衍生物聚合物）制成了ITO（氧化铟锡）／PTPD／AIq3（8-羟基喹啉铝）／Mg：Ag异质结电致发光器件,以高效荧光材料Rubrene（荧烯）为掺杂剂和标志物。研究了异质结掺杂有机电致发光器件载流子的复合区域,并基于电致发光（EL）光谱,认为掺杂器件的发射为载流子陷阱和Fbrster能量转换过程的共同作用。     

PTPD／AIq3异质结掺杂器件载流子的复合与发射

以新型的空穴传输材料PTPD（三苯基二胺衍生物聚合物）制成了ITO（氧化铟锡）／PTPD／AIq3（8-羟基喹-啉铝）／Mg：Ag异质结电致发光器件,以高效荧光材料Rubrene（红荧烯）为掺杂剂和标志物。研究了异质结掺杂有机电致发光器件载流子的复合区域,并基于电致发光（EL）光谱,认为掺杂器件的发射为载流子陷阱和Forster能量转换过程的共同作用。     

Road vehicle-induced vibration control of microelectronics facilities

A hybrid control platform is investigated in this paper to mitigate microvibrations to a group of vibration-sensitive equipment installed in a microelectronics facility subject to nearby road vehicle-induced horizontal and vertical ground motions. The hybrid control platform, on which microelectronics equipment is installed, is mounted on a building floor through a series of passive mounts and controlled by hydraulic actuators in both horizontal and vertical directions. The control platform is an elastic body with significant bending modes of vibration, and a sub-optimal control algorithm is used to manipulate the hydraulic actuators with actuator dynamics included. The finite element model and the equations of motion of the coupled platform-building system are then established in the absolute coordinate to facilitate the feedback control and performance evaluation of the platform. The horizontal and vertical ground vibrations at the base of the building induced by nearby moving road vehicles are assumed to be stationary random processes. A typical three-story microelectronics building is selected as a case study. The case study shows that the vertical vibration of the microelectronics building is higher than the horizontal. The use of a hybrid control platform can effectively reduce both horizontal and vertical microvibrations of the microelectronics equipment to the level which satisfies the stringent microscale velocity requirement specified in the Bolt Beranek & Newman (BBN) criteria.     

A seismic retrofit method by connecting viscous dampers for microelectronics factories

The implementation of viscous dampers to microelectronics factories has been previously proved not to affect the micro‐vibration of the factories in operation so that the vibration‐sensitive manufacturing process will not be interfered. Therefore, a seismic retrofit strategy which employs the viscous dampers installed in between the exterior and interior structures of the ‘fab’ structure is proposed in the study. The design formulas corresponding to the proposed retrofit method are derived using the non‐proportional damping theory. Based on the study, it is found that the added damping ratio to the fab structure depends greatly on the frequency ratio of the two structures in addition to the damping coefficients of the added dampers. Outside the bandwidth of the frequency ratio in which the added damping ratio is very sensitive to the variation of the frequency ratio, the added damping ratio can be well captured using the classical damping theory. Copyright © 2007 John Wiley & Sons, Ltd.