石墨烯-硅光电子器件研究进展

本文综述了石墨烯-硅光电子器件的研究进展.随着科技的发展,人们对信息容量、传输速度、处理速度、能耗及成本提出了更高的要求.基于石墨烯特有的光学特性和电学特性,自发现以来备受关注.近年来,随着低成本、高速和高密度集成的硅基光电子技术的蓬勃发展,石墨烯-硅基光电子器件的研究迅速地成为了研究的热点,并取得了突破性进展.石墨烯-硅基光电子器件相比于传统的硅基光电子器件具有低功耗、温漂小、大带宽、带隙可控等优势.本文从调制器、探测器、偏振控制器等几个方面详细介绍了石墨烯-硅基光电子器件的发展现状.     

rGO-TiO_2/ASC新型光催化剂用于烟气光氧化脱硝性能研究

采用一步溶剂热法制备了活化半焦负载还原氧化石墨烯掺杂二氧化钛新型负载型光催化剂,即rGO-TiO2/ASC。分别考察了高温水汽活化方法和还原氧化石墨烯rGO掺杂量对光催化脱硝性能的影响,并进一步探究光照条件、烟气氧含量和烟气湿度对NO氧化脱除的作用,得出新型负载型光催化剂rGO-TiO2/ASC光催化脱硝过程主要过程。结果表明,5%水汽高温活化半焦ASC的脱硝效率最高,反应4h后可达52%。rGO负载量为8%时,负载型光催化剂rGOTiO2/ASC脱硝性能4h后转化率达70.68%。有无O2对脱硝率影响较大,有无光照对其影响次之。无H2O时,脱硝率呈现先平稳后下降的趋势。新型负载型光催化剂rGO-TiO2/ASC的脱硝过程由光催化活性组分rGO-TiO2/ASC的光催化氧化和载体部分ASC的常规氧化两部分组成。     

Effects of Coal Rank and High Organic Sulfur on the Structure and Optical Properties of Coal-based Graphene Quantum Dots

Coal‐based graphene quantum dots (GQDs) were successfully produced via a one‐step chemical synthesis from six different coal ranks, from which two superhigh organic sulfur (SHOS) coals were selected as natural S‐doped carbon sources for the preparation of S‐doped GQDs. The effects of coal properties on coal‐based GQDs were analyzed by means of high‐resolution transmission electron microscopy (HRTEM), X‐ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, X‐ray photoelectron spectroscopy (XPS), ultraviolet‐visible (UV‐Vis) absorption spectroscopy, and fluorescence emission spectra. It was shown that all coal samples can be used to prepare GQDs, which emit blue‐green and blue fluorescence under ultraviolet light. Anthracite‐based GQDs have a hexagonal crystal structure without defects, the largest size, and densely arranged carbon rings in their lamellae; the high‐rank bituminous coal‐based GQDs are relatively reduced in size, with their hexagonal crystal structure being only faintly visible; the low‐rank bituminous coal‐based GQDs are the smallest, with sparse lattice fringes and visible internal defects. As the metamorphism of raw coals increases, the yield decreases and the fluorescence quantum yield (QY) initially increases and then decreases. Additionally, the surface of GQDs that were prepared using high‐rank SHOS coal (high‐rank bituminous coal) preserves rich sulfur content even after strong oxidation, which effectively adjusts the bandgap and improves the fluorescence QY. Thus, high‐rank bituminous coal with SHOS content can be used as a natural S‐doped carbon source to prepare S‐doped GQDs, extending the clean utilization of low‐grade coal.     

酪氨酸酶固定化碳材料对苯酚的生物降解性能

以新型碳材料氧化石墨烯作为载体,利用共价结合方法制备酪氨酸酶固定化氧化石墨烯复合物,并利用该复合物对苯酚进行催化降解,探讨酶的加载特性和酶的催化活性,以及固定化酪氨酸酶催化降解苯酚的最优条件及储存稳定性。通过对固定化酪氨酸酶进行活性和固定量分析后认为:单位质量载体的酶固定量为1.78 mg/mg,单位质量载体的酶活性为1 880.6 U/mg;固定化酪氨酸酶在30h内对47.06mg/L苯酚的降解率可达86.3%,降解反应的最优条件为pH=7.0、温度=25℃;固定化酪氨酸酶在4℃条件下30d后仍保持初始活性的77.7%,其稳定性优于游离酪氨酸酶。另外,在氧化石墨烯上引入磁颗粒,既简化了酶固定流程,又能做到回收利用。     

Negative differential resistance behaviour in N-doped crossed graphene nanoribbons

By using first-principles calculations and nonequilibrium Green's function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance (NDR) behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested.     

Fabrication of suspended graphene devices and their electronic properties

Suspended graphene devices are successfully fabricated by using a novel PMMA/MMA/PMMA tri-layer resist technique. The gap between graphene and dielectric substrate can be easily controlled by the thickness of the bottom PMMA layer, and no wet-etching with hazardous hydrofluoric acid is involved in our fabrication process. Electrical characterizations on suspended graphene devices are performed in vacuum when in-situ current annealing directly leads to a significant improvement on transport properties of graphene, i.e., the increase of carrier mobility with the reduction of width of Dirac peak. Our results make a new opportunity to study intrinsic properties of graphene.     

The complex band structure for armchair graphene nanoribbons

Using a tight binding transfer matrix method, we calculate the complex band structure of armchair graphene nanoribbons. The real part of the complex band structure calculated by the transfer matrix method fits well with the bulk band structure calculated by a Hermitian matrix. The complex band structure gives extra information on carrier's decay behaviour. The imaginary loop connects the conduction and valence band, and can profoundly affect the characteristics of nanoscale electronic device made with graphene nanoribbons. In this work, the complex band structure calculation includes not only the first nearest neighbour interaction, but also the effects of edge bond relaxation and the third nearest neighbour interaction. The band gap is classified into three classes. Due to the edge bond relaxation and the third nearest neighbour interaction term, it opens a band gap for N=3M-1. The band gap is almost unchanged for N=3M+1, but decreased for N=3M. The maximum imaginary wave vector length provides additional information about the electrical characteristics of graphene nanoribbons, and is also classified into three classes.     

矿物晶体的缺陷

晶体具有极其规则的原子结构.然而,大多数晶体物质不是完整的,原子排列的规则图像被晶体缺陷所破坏.本文列举不同类型的缺陷:点缺陷(空位、间隙离子、置换离子、反位缺陷、拓扑缺陷、Schottky缺陷和Frenkel缺陷)、线缺陷(位错)、面缺陷(颗粒边界、小角晶界、反相畴和堆垛层错)和体缺陷(空洞和析出物).     

单层正三角锯齿型石墨烯量子点的电子结构和磁性

采用基于密度泛函理论的广义梯度近似(GGA),对不同尺寸(N=2—11)的单层正三角锯齿型石墨烯量子点(Z _{N -GNDs)的结构进行优化,得到与实验数据较好符合的晶格常数,进一步计算得到不同尺寸下体系的自旋多重度、磁矩、电子态密度以及自旋电子密度.结果表明:所有体系都呈现金属性,在尺寸较小的体系中量子尺寸效应对电子结构的影响比较明显;与单层石墨烯片一样,sp²杂化作用和非键态电子在量子点中仍起到非常重要的作用;费米能级上有自旋向上的电子分布,体系的自旋多重度}