企鹅珍珠贝游离珠插核过程中死亡因素初探

本文通过企鹅珍珠贝游离珠插核过程中的一系列对比实验,首次探讨了施术贝死亡过高的原因.发现术前处理时间太长造成的贝体虚弱会增加死亡率;施术伤口对贝体造成的生理不适如能及时得以恢复,不会因此发生大规模的死亡;偏小的核位、较厚的核位皮层肌肉以及由之产生的较强的排异反应会严重影响企鹅珍珠贝施术贝的成活率;休养时提倡先室内休养10d左右再移至海区,且不必添加昂贵的抗生素.     

Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO2 matrix

Photoluminescence (PL) spectra of Si nanocrystals (NCs) prepared by 130 keV Si ions implantation onto SiO₂ matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect (QCE) and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds (DBs) on Si NCs was also investigated. For hydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 10¹⁷ ions /cm² is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.     

‘Box‐Profile’ Ion Implants as Geochemical Reference Materials for Electron Probe Microanalysis and Secondary Ion Mass Spectrometry

Although electron probe microanalysis and secondary ion mass spectrometry are widely used analytical techniques for geochemical and mineralogical applications, metrologically rigorous quantification remains a major challenge for these methods. Secondary ion mass spectrometry (SIMS) in particular is a matrix‐sensitive method, and the use of matrix‐matched reference materials (RMs) is essential to avoid significant analytical bias. A major problem is that the number of available RMs for SIMS is extremely small compared with the needs of analysts. One approach for the production of matrix‐specific RMs is the use of high‐energy ion implantation that introduces a known amount of a selected isotope into a material. We chose the more elaborate way of implanting a so‐called ‘box‐profile’ to generate a quasi‐homogeneous concentration of the implanted isotope in three dimensions, which allows RMs not only to be used for ion beam analysis but also makes them suitable for EPMA. For proof of concept, we used the thoroughly studied mineralogically and chemically ‘simple’ SiO₂ system. We implanted either ⁴⁷Ti or ⁴⁸Ti into synthetic, ultra‐high‐purity silica glass. Several ‘box‐profiles’ with mass fractions between 10 and 1000 μg g^?1 Ti and maximum depths of homogeneous Ti distribution between 200 nm and 3 μm were produced at the Institute of Ion Beam Physics and Materials Research of Helmholtz‐Zentrum Dresden‐Rossendorf. Multiple implantation steps using varying ion energies and ion doses were simulated with Stopping and Range of Ions in Matter (SRIM) software, optimising for the target concentrations, implantation depths and technical limits of the implanter. We characterised several implant test samples having different concentrations and maximum implantation depths by means of SIMS and other analytical techniques. The results show that the implant samples are suitable for use as reference materials for SIMS measurements. The multi‐energy ion implantation technique also appears to be a promising procedure for the production of EPMA‐suitable reference materials.     

淡水有核珍珠大面积养殖技术研究

在33.3hm2的育珠水体中,选择2龄三角帆蚌作手术贝,采用外套膜错位排列的方法,每只母蚌植入直径6～7mm珠核10粒进行育珠试验。结果表明,经2～3a的育珠,育珠蚌成活率75%,留核率45%～75%,优质珠率40%,经济效益是普通无核珍珠的3倍以上,并且收珠后的育珠蚌可以再次植核育珠。1991-2001年,试验结果以广东绍河珍珠有限公司建立的养殖基地在福建、江西、安徽、浙江和江苏等地进行示范和推广,推广面积2000hm2,取得良好的经济效益和社会效益。     

铒离子注入6H-SiC的横向离散研究

利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布、射程离散和横向离散规律等是很重要的.用400 keV能量的铒(Er)离子分别与样品表面法线方向成0°,45°和 60°倾角注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×10¹⁵ cm^-2 的400 keV Er离子注入6H-SiC晶体的横向离散.测出的实验值与TRIM98和SRIM 2006得到的理论模拟值进行了比较,发现实验值跟TRIM98和SRIM     

企鹅珍珠贝游离珠培育的初步观察

分别用锥形笼吊养法和塑料笼吊养法进行企鹅珍珠贝植核母贝的术前处理、在核位的左袋和右袋进行植核培育游离珍珠。经过13~15d的术前处理,锥形笼吊养法和塑料笼吊养法养殖的母贝成活率分别为93.67%和85.67%。经2个月休养,左袋插核的育珠贝死亡率和留核率分别为41.85~42.76%和10.34~12.96%;右袋插核的育珠贝死亡率及留核率分别为39.0%~40.0%和19.67%~20.00%。结果表明,合适的企鹅珍珠贝术前处理方法为锥形笼吊养法,合适的植核部位为右袋。     

Refinement of Phosphorus Determination in Quartz by LA‐ICP‐MS through Defining New Reference Material Values

The aim of this study was to improve the quality of laser ablation inductively coupled plasma‐mass spectrometry (LA‐ICP‐MS) determination of phosphorus in crystalline quartz. Over the last decade, the Geological Survey of Norway has routinely performed trace element determinations on quartz from both operating and potential quartz deposits by LA‐ICP‐MS. The determined phosphorus concentrations were, with but few exceptions, consistently within the range of 10 to 30 μg g^?1, results that seemed to be both too high and too consistent. The multi‐material calibration curve obtained from a suite of reference materials (NIST SRM 610, 612, 614, 1830, BAM No. 1 amorphous SiO₂ glass) did not define a precise regression line. Published phosphorus concentrations for the reference materials are poorly constrained and the observed dispersions along the multi‐material calibration curve suggest that some of the reference values may be inaccurate. Furthermore, the calibration curve did not pass through the origin of the [(cps ³¹P/cps ³⁰Si) · cone. Si] vs. P concentration diagram; thus, in addition to the uncertainties of the literature values of phosphorus, it is difficult to define the calibration curve. Three reference materials (NIST SRM 614, 1830, synthetic quartz KORTH) were sent for phosphorus accelerator implantation, providing an independent and accurate (± 3%) approach for determining phosphorus concentrations in crystalline quartz. The intrinsic phosphorus concentrations of the three implanted samples plus those for NIST SRM 610 and 612 were determined by secondary ion mass spectrometry (SIMS), yielding new phosphorus values for NIST SRM 610, 612, 614 and 1830. Using these new values resulted in a better defined LA‐ICP‐MS calibration curve. However, the source of the ICP‐MS related background could not be defined, such that it must still be empirically corrected for.     

企鹅珍珠贝游离珠插核效果的初步观察

借鉴马氏珠母贝插核技术培育企鹅珍珠贝(Pteria(Magnaxicula)pengui Roding)游离珠时，死亡率为23％，留核率为11．1％，死亡高峰出现在施术后的第2～7天，脱核高峰出现在施术后第2～10天，生理状态在施术后17d左右进入稳定期。70～90d后基本恢复，可结束休养进入珍珠育成。另外，为提高成珠率和成活率，植核用贝要经人工养殖驯化，采用开放式与笼养相结合的养殖方式；术后可采用室内与海区相结合的休养方式。     

MSCT对成年人下颌神经管的测量分析

目的:通过MSCT研究下颌神经管的走行,为下颌骨种植术前评估提供数据支持。方法:收集60例成人的下颌骨MSCT数据,测量不同观察截面下颌神经管至四周骨壁的垂直及水平距离,并对比分析男女之间、左右侧之间的差异。结果:下颌神经管的上缘至下颌骨牙槽嵴顶的垂直距离范围为(13.21±1.73)mm至(18.03±1.73)mm;除颏孔区外,男女间差异有统计学意义,而左右组间差异无统计学意义。下颌神经管的下缘至下颌骨下缘的垂直距离范围为(15.57±1.51)mm至(8.41±1.35)mm;男女间差异有统计学意义,左右组间差异无明显统计学意义。下颌神经管的外侧缘至下颌骨颊侧骨板的水平距离范围为0 mm至(8.01±1.33)mm;下颌神经管的内侧缘至舌侧骨板的平均距离范围为(7.91±1.03)mm至(2.52±0.49)mm;在男女组间、左右两侧组间差异均无统计学意义。结论:MSCT可以准确地反映下颌神经管在下颌骨内的走行;在下颌骨后牙区种植时,植入体长度在10～15 mm间较为安全。     

Investigation of the lateral spread of erbium ions implanted in silicon crystal

The erbium ions at energy of 400 keV and dose of 5×10¹⁵ ions/cm² were implanted into silicon single crystals at room temperature at the angles of 0°, 45°and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM'98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes.