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A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m- 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V. 相似文献
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采用显式物质点法模拟高速远程滑坡的破坏过程。计算方法采用广义插值物质点法,计算流程采用MUSL格式,本构关系采用基于Drucker-Prager屈服准则下的弹塑性模型。首先,利用泡沫铝材料模型试验验证了物质点法模拟大变形问题的有效性。其次,构建远程滑坡模型,模拟远程滑坡的整个破坏过程,讨论了内摩擦角对大变形滑坡滑距的影响。结果表明,内摩擦角对远程滑坡的滑距起着决定性的作用,内摩擦角的减小,滑坡的滑距越大。从土体强度理论分析,土体内摩擦角越小,对应于非饱和土体的三轴不固结不排水剪切试验的强度,说明土体的固结效果和排水效果较差。因此对于一些杂填土边坡,要保证土体完全固结和排水,否则极易产生高速远程滑坡。 相似文献
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