排序方式: 共有17条查询结果,搜索用时 62 毫秒
1.
CMOS相机是一种重要的固体成像设备?随着科研级CMOS相机的性能不断提高,现已广泛应用于科研领域?新真空太阳望远镜的成像设备也使用CMOS相机?因此建立一个天文CMOS相机测试系统?对于新购CMOS相机的验收以及现有CMOS相机的定期检测和维护有十分重要的意义。介绍了CMOS相机测试平台的硬件组成,并针对实际测试中对设备控制的需求,以及利用控制器对相应的设备直接控制,提出了基于TCP/IP协议以及串口通信的设计方案?利用C#编程语言设计了一套多线程并行的控制系统软件?实现各设备在局域网内的远程并行控制。通过对设备的运行测试,结果表明,系统能良好地控制各设备的正常运行?满足测试系统集成控制的需求. 相似文献
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Albert M. Fowler K. Michael Merrill William Ball Arne Henden Fred Vrba Craig McCreight 《Experimental Astronomy》2002,14(1):61-68
The Orion program is a project to develop a 2K × 2K infrared focal plane using InSb p-on-n diodes for detectors. It is the
natural follow-up to the successful Aladdin 1K × 1K program started in the early 90's. The work is being done at the Raytheon
Infrared Operations Division (RIO, previously known as the Santa Barbara Research Center) by many of the same people who created
the Aladdin focal plane. The design is very similar to the successful Aladdin design with the addition of reference pixels,
whole array readout (no quadrants), two-adjacent-side buttability, and a packaging design that includes going directly to
the ultimate focal plane size of 4K × 4K. So far we have successfully made a limited number of hybrid modules with InSb detectors.
In this paper we will describe the design features and test data taken from some of these devices.
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献
3.
采用三级差分共源结构设计了一种基于65-nm CMOS工艺的W波段功率放大器,并利用两路电流型功率合成结构进行功率合成以提升输出功率.为了同时实现单差分转换、阻抗匹配、直流供电,匹配网络采用变压器结构.仿真结果显示,在1 V的电源电压下,该功率放大器的小信号增益为12.7~15.7 dB,3-dB带宽为84~104 GHz,饱和输出功率为14.6 dBm,峰值功率附加效率为9.7%.该功率放大器具有良好的大信号性能,且芯片的核心面积仅为0.115 mm2. 相似文献
4.
在比较反转触发器(TFF)的各种结构基础上,采用一种单时钟信号控制,实现高速分频的电路结构,设计实现了用于光通信中时钟数据恢复电路的八分频器。该八分频器使用动态负载,输出两路互补信号,采用SMIC0.18um1P6MCMOS工艺,使用Cadence公司的Spectre仿真器进行模拟验证,实验结果证明,在电源电压为1.8V的情况下,该八分频器的工作速度10GHz、功耗仅为4.705mW。 相似文献
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James W. Beletic Sean Adkins Barry Burke Robert Reich Bernie Kosicki Vyshnavi Suntharalingham Charlie Bleau Ray DuVarney Richard Stover Jerry Nelson Francois Rigaut 《Experimental Astronomy》2005,19(1-3):103-109
All of the extremely large telescopes (ELTs) will utilize sodium laser guide star (LGS) adaptive optics (AO) systems. Most of these telescopes plan to use the Shack-Hartmann approach for wavefront sensing. In these AO systems, the laser spots in subapertures at the edge of the pupil will suffer from spot elongation due to the 10 km extent of the sodium layer and the large separation from the projection laser. This spot elongation will severely degrade the performance of standard geometry wavefront sensing systems. In this paper, we present a CCD with custom pixel morphology that aligns the pixels of each subaperture with the radial extension of the LGS spot. This CCD design will give better performance than a standard geometry CCDs for continuous wave lasers. In addition, this CCD design is optimal for a pulsed sodium laser. The pixel geometry enables each subaperture to follow a laser pulse traversing the sodium layer, providing optimal sampling of a limited number of detected photons. In addition to novel pixel layout, this CCD will also incorporate experimental JFET sense amplifiers and use CMOS design approaches to simplify the routing of biases, clocks and video output. This CCD will attain photon-noise limited performance at high frame rates, and is being incorporated in the plans for the Thirty Meter Telescope (TMT). 相似文献
8.
数字射线技术正获得越来越广泛的应用,并成为射线检测技术的发展趋势。但目前有关数字射线技术的标准对于图像质量控制方面的规定还相对简单,难于进行有效的质量控制,因而在实际检测中可能出现较大的随意性而影响检测结果评判。使用互补金属氧化物半导体(CMOS)线阵列射线探测器与阶梯试块进行射线检测实验,得到了不同厚度所对应的灰度图像,测试了影像对比度,同时分析了图像的信噪比和检测灵敏度。通过对实验结果的综合对比分析,提出了数字化射线检测图像质量控制措施。 相似文献
9.
This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductance, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed. 相似文献
10.
A low-voltage (≤3.3 V) imaging technology has been developed to enable scientific-grade imagers with low-power complex functions
on chip. A 128 × 128 CCD imager with on-chip clocking and charge-domain analog-to-digital conversion, as well as an exploratory
active pixel sensor have been demonstrated. A 640 × 960 CCD imager with optimized 12 bit charge-domain conversion and an improved
active pixel sensor are presently in fabrication.
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献