相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究

采用射频磁控溅射方法制备了两种用于相变存储器的Ge₁Sb₂Te₄和Ge₂Sb₂Te₅相变薄膜材料,对其结构、电学输运性质和恒温下电阻随时间的变化关系进行了比较和分析.X射线衍射(XRD)和原子力显微镜(AFM)的结果表明:随着退火温度的升高,Ge₁Sb₂Te₄薄膜逐步晶化,由非晶态转变为多晶态,表面出现均匀的、     

打结高分子链穿孔行为的研究

以三叶草型结(即3₁结)为例,采用分子动力学(MD)方法,研究打结高分子链在外场力作用下穿越微孔的动力学过程.模拟发现,在拉动打结高分子链的过程中,结的大小呈涨落变化,直至最后散结.定性讨论了结的存在对高分子链穿孔速率的影响.在外场力作用下,打结高分子链平均穿孔时间(τ)与链长(N)满足标度关系τ~N^α,其中标度系数α随外场力f增大而增大.对于短链,外场力越大,平均穿孔时间越短;     

低扩散系数对Pd77 Cu6 Si17合金易非晶化的影响

采用激光熔凝技术,研究了Pd₇₇Cu₆Si₁₇合金快速凝固组织的演变规律.研究表明:随着生长速度的增大,Pd₇₇Cu₆Si₁₇合金晶体生长组织形貌发生了Pd₃Si枝晶+共晶-ξ枝晶+共晶-共晶团簇-规则共晶-非晶的转变;共晶失稳即非晶形成的临界生长速度为6 mm/s,最小层片间距为35 nm.通过与Al-25 wt%Sm,Al-32.7 w     

氧化钒晶体的半导体至金属相变的理论研究

本文利用第一性原理方法研究了金红石相和单斜相VO₂晶体的电子结构和热力学性质.在计算中采用局域密度近似结合Hubbard U模型(LDA+U)描述电子的局域强关联效应,同时也利用微扰密度泛函方法计算了两种相结构的声子谱.计算结果表明V原子3d电子轨道中x²-y²轨道能级分裂决定了VO₂晶体在不同相结构下的金属和绝缘体特性.零温状态方程计算揭示了在68 GPa时可以发生从单斜结构     

N掺杂SnO2材料光电性质的第一性原理研究

采用全电势线性缀加平面波(full potential linearized augmented plane wave method,简记为FP-LAPW)方法,基于密度泛函理论第一性原理计算分析N掺杂SnO₂材料,研究了在N替代O原子和N替代Sn原子情况下的电子态密度、电荷密度分布以及光学性质.研究表明N掺杂替代Sn较之N掺杂替代O原子的带隙要宽,都宽于SnO₂的本征带隙,且两种情况下N分别处于负氧化态和正氧化态,其介电函数谱也与带隙对应发生蓝移,从理论上指出     

增强型AlGaN/GaN高电子迁移率晶体管高温退火研究

深入研究了两种增强型AlGaN/GaN高电子迁移率晶体管(HEMT)高温退火前后的直流特性变化.槽栅增强型AlGaN/GaN HEMT在500 ℃ N₂中退火5 min后,阈值电压由0.12 V正向移动到0.57 V,器件Schottky反向栅漏电流减小一个数量级.F注入增强型AlGaN/GaN HEMT在 400 ℃ N₂中退火2 min后,器件阈值电压由0.23 V负向移动到-0.69 V,栅泄漏电流明显增大.槽栅增强型器件退火过程中Schottky有效势垒     

mKdV-sine-Gordon方程丰富的相互作用解

基于mKdV-sine-Gordon方程的Wronsk解的形式和结构,提出了Wronsk形式展开法,通过这一方法求得了该方程的丰富的相互作用解,该方法的主要特征是不要求Wronsk行列式元素满足线性偏微分方程组。     

Interference phase of mass neutrino in Reissner—Nordstr?m—de Sitter space—time

In Reissner--Nordstr?m--de Sitter space--time, we calculate the interference phase of mass neutrino along geodesic in the radial direction, and then investigate the effects of the cosmological constant La on the phase. Morever, the expression of the interference phase can be reduced to that in Reissner--Nordstr?m space--time when Λ approaches to zero.     

Active manipulation of the selective alignment by two laser pulses

This paper solves numerically the full time-dependent Schrõdinger equation based on the rigid rotor model, and proposes a novel strategy to determine the optimal time delay of the two laser pulses to manipulate the molecular selective alignment. The results illustrate that the molecular alignment generated by the first pulse can be suppressed or enhanced selectively, the relative populations of even and odd rotational states in the final rotational wave packet can be manipulated selectively by precisely inserting the peak of the second laser pulse at the time when the slope for the alignment parameter by the first laser locates a local maximum for the even rotational states and a local minimum for the odds, and vice versa. The selective alignment can be further optimised by selecting the intensity ratio of the two laser pulses on the condition that the total laser intensity and pulse duration are kept constant.     

The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance--voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.