雷诺数对圆形渐缩喷嘴湍流射流的影响

The present study systematically investigates by experiment the influence of Reynolds number (Re) on a turbulent jet issuing from a smoothly-contracting round nozzle. Measurements were performed for seven Reynolds numbers varying from Re = 4,050 to Re = 20,100 using single hot-wire anemometry and over an axial distance of 30 nozzle exit diameters. Although all the exit velocity profiles are of "top-hat" shape, these measurements reveal significant dependence on Re of the exit and downstream flows. The effect of Re on both the mean and turbulent fields is substantial for Re ＜ 10,000 and becomes weak beyond Re = 10,000. The length of the jet’s potential core and the far-field rates of decay and spread all depend significantly on Re.     

银纳米杆高温熔化断裂弛豫性能的原子级模拟研究

采用分子动力学模拟方法,研究了不同长度银纳米杆在不同温度弛豫过程中的结构演变过程.结果表明:银纳米杆存在一与杆长相关的临界熔断温度,该临界熔断温度随杆长增加而显著降低.当温度大于熔点而小于临界熔断温度时,体系形成一个高度无序的球形团簇,而温度大于临界熔断温度时,体系则熔断成两个球形团簇.并给出了银纳米杆的产生该熔断现象的机理.     

高效异质结构四波长波分复用器的设计与优化

将两光子晶体单模波导平行、邻近放置构成一个光子晶体波导耦合结构.根据耦合和解耦合理论,设计了一种新型的高效异质结构四波长波分复用器.应用时域有限差分法模拟了该器件的效率,并通过改变一排介质柱的折射率,实现了较高的透射率.进一步发现在入射口处添加三对介质柱,可以有效地降低系统的反射,实现了四个波长的高效传输,四个波长的透射率均超过了90%.该器件不仅具有较高的透射率,而且其尺寸仅为36 μm×17 μm,在未来的光子集成回路中具有潜在的应用价值.     

增强型AlGaN/GaN高电子迁移率晶体管高温退火研究

深入研究了两种增强型AlGaN/GaN高电子迁移率晶体管(HEMT)高温退火前后的直流特性变化.槽栅增强型AlGaN/GaN HEMT在500 ℃ N₂中退火5 min后,阈值电压由0.12 V正向移动到0.57 V,器件Schottky反向栅漏电流减小一个数量级.F注入增强型AlGaN/GaN HEMT在 400 ℃ N₂中退火2 min后,器件阈值电压由0.23 V负向移动到-0.69 V,栅泄漏电流明显增大.槽栅增强型器件退火过程中Schottky有效势垒     

Improvement in the calculation of anti-Stokes energy transfer and experimental justification based on Er0.01YbxY1 - 0.01 - xVO4 crystal

The improvement on the calculation of anti-Stokes energy transfer rate is studied in the present work. The additional proportion coefficient between Stokes and anti-Stokes light intensities of quantum Raman scattering theory as compared with the classical Raman theory is introduced to successfully describe the anti-Stokes energy transfer. The theoretical formula for the improvement on the calculation of anti-Stokes energy transfer rate is derived for the first time in this study. The correctness of introducing coefficient exp{ΔE / kT} from well-known Raman scatter theory is demonstrated also. Moreover, the experimental lifetime measurement in Er_0.01Yb_xY_{1 - 0.01 - x}VO₄ crystal is performed to justify the validity of our important improvement in the original phonon-assisted energy transfer theory for the first time.     

Role of buffer layer in electronic structures of iron phthalocyanine molecules on Au(111)

We investigate the electronic structures of one and two monolayer iron phthalocyanine (FePc) molecules on Au(111) surfaces. The first monolayer FePc is lying flat on the Au(111) substrate, and the second monolayer FePc is tilted at ～15° relative to the substrate plane along the nearest neighbour [101^-] direction with a lobe downward to the central hole of the unit cell in the first layer. The structural information obtained by first-principles calculations is in agreement with the experiment results. Furthermore, it is demonstrated that the electronic structures of FePc molecules in one-monolayer FePc/Au(111) system are perturbed significantly, while the electronic structures of FePc molecules in the second monolayer in two-monolayer FePc/Au(111) system remain almost unchanged due to the screening of the buffer layer on Au(111).     

Controlled decoherence of floating flux qubits

In Born--Markov approximation, this paper calculates the energy relaxation time T₁ and the decoherence time T₂ of a floating flux qubit by solving the set of Bloch--Redfield equations. It shows that there are two main factors influencing the floating flux qubits: coupling capacitor in the circuit and the environment resistor. It also discusses how to improve the quantum coherence time of a qubit. Through shunt connecting/ series connecting inductive elements, an inductive environment resistor is obtained and further the reactance component of the environment resistor is improved,which is beneficial to the enhancement of decoherence time of floating flux qubits.     

Study on the negative bias temperature instability effect under dynamic stress

This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency.     

Control of high-order harmonic generation with two-colour laser field

We numerically investigate the high-order harmonic generation with two-colour optical field, taking into consideration the propagation effects. Some harmonics can be dramatically enhanced at a certain delay between the fundamental pulse and its second harmonics. Choice of the enhanced harmonics can be realised by changing the time delay between the two laser pulses.     

基于遥感光谱反射率反演黄河口海域Ⅱ类水体悬浮泥沙浓度模型

依据黄河口海域含沙水体野外实测光谱反射率为参考实验数据,结合水体表面光谱观测数据建立了经验回归模型,从而定量估测黄河口海域水体表层悬浮泥沙质量浓度,最终得出黄河口海域不同年份水体的悬浮泥沙质量浓度图,这对分析河口海岸带冲淤变化过程具有重要的意义。