局域椭圆偏振光束强聚焦性质的研究

数值计算了局域椭圆偏振光束强聚焦时在焦平面上的横向场强分布、纵向场强分布、横向能流以及纵向角动量分布.结果显示在焦平面上光束总的纵向角动量为零,但在不同象限光束具有不同方向的纵向角动量.当相位延迟角度在0到π之间变化时横向场强分布基本不变,但纵向场强分布有很明显的变化.液晶相位延迟器由外部电压控制,使其相位延迟角度能在0到π之间可以连续取值.因而液晶相位延迟器的外接电压可以实现对焦平面上的纵向场强以及纵向角动量的实时调控.     

相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究

采用射频磁控溅射方法制备了两种用于相变存储器的Ge₁Sb₂Te₄和Ge₂Sb₂Te₅相变薄膜材料,对其结构、电学输运性质和恒温下电阻随时间的变化关系进行了比较和分析.X射线衍射(XRD)和原子力显微镜(AFM)的结果表明:随着退火温度的升高,Ge₁Sb₂Te₄薄膜逐步晶化,由非晶态转变为多晶态,表面出现均匀的、     

丝阵Z箍缩早期消融等离子体动力学的二维数值模拟研究

采用理想磁流体力学模型,给出合理的二维(r, θ)质量注入边界条件,对丝阵Z箍缩早期消融等离子体的动力学过程进行了二维(r, θ)数值模拟研究,得到消融等离子体各参量以及磁场的二维时空分布.模拟结果表明,消融等离子体的运动包括四个主要阶段:首先向轴漂移,然后在轴线处滞止并形成先驱等离子体柱,随后先驱等离子体柱被压缩,最后缓慢膨胀.计算了不同丝阵半径和丝间距情况下消融等离子体到轴速度以及消融质量占丝阵总质量的份额,它们的变化规律与实验结果基本符合.通过     

Nd:YAG纳秒激光诱导硅表面微结构的演化

利用Nd:YAG纳秒激光(波长为532和355 nm)对单晶硅在真空中进行了累积脉冲辐照,研究了表面微结构的演化情况.在激光辐照的初始阶段,532和355 nm激光脉冲均在硅表面诱导出了波纹结构,后者辐照硅表面后形成了近似同心但稍显混乱的环形波纹结构.随着脉冲数的增加,波纹结构逐渐演化为一种类似珠形的凹凸结构,最后形成准规则排列的微米量级锥形结构,该微结构的生长依赖于表面张力波和结构自组织.分析发现,形成的交叉环形结构主要是在355 nm激光辐照硅的过程中,表面张力波导致波纹结构部分叠加的结果.     

同步辐射标定平面镜反射率不确定度分析方法研究

为了提高多通道软X射线能谱仪的测量精度,2009年在北京同步辐射(BSRF)软X束线源上对多种材料的掠入射平面镜的反射率进行了标定.在标定实验的基础上,对光源的单色性、高次谐波以及源强稳定性、探测器响应一致性和数据采集统计误差等多项不确定因素进行了评估,给出了反射率的修正方法和相应的不确定度分析结果.     

极性分子型电流变液导电机理研究

极性分子型电流变液是一种新型的电流变材料.其介电颗粒上吸附极性分子,极性分子在颗粒间强局域电场作用下发生取向是产生巨电流变效应的关键.通过对Ca—Ti—O(CTO)体系极性分子型电流变液电流密度的测量发现,其导电行为遵从Poole-Frenkel效应的规律,这是极性分子型电流变液的重要特征之一.而500 ℃处理过的CTO粉体不含极性分子,所配制的电流变液无巨电流变效应,其电流密度随外电场强度近似地呈线性关系,显示出传统电流变液特性.     

Improvement in the calculation of anti-Stokes energy transfer and experimental justification based on Er0.01YbxY1 - 0.01 - xVO4 crystal

The improvement on the calculation of anti-Stokes energy transfer rate is studied in the present work. The additional proportion coefficient between Stokes and anti-Stokes light intensities of quantum Raman scattering theory as compared with the classical Raman theory is introduced to successfully describe the anti-Stokes energy transfer. The theoretical formula for the improvement on the calculation of anti-Stokes energy transfer rate is derived for the first time in this study. The correctness of introducing coefficient exp{ΔE / kT} from well-known Raman scatter theory is demonstrated also. Moreover, the experimental lifetime measurement in Er_0.01Yb_xY_{1 - 0.01 - x}VO₄ crystal is performed to justify the validity of our important improvement in the original phonon-assisted energy transfer theory for the first time.     

Active manipulation of the selective alignment by two laser pulses

This paper solves numerically the full time-dependent Schrõdinger equation based on the rigid rotor model, and proposes a novel strategy to determine the optimal time delay of the two laser pulses to manipulate the molecular selective alignment. The results illustrate that the molecular alignment generated by the first pulse can be suppressed or enhanced selectively, the relative populations of even and odd rotational states in the final rotational wave packet can be manipulated selectively by precisely inserting the peak of the second laser pulse at the time when the slope for the alignment parameter by the first laser locates a local maximum for the even rotational states and a local minimum for the odds, and vice versa. The selective alignment can be further optimised by selecting the intensity ratio of the two laser pulses on the condition that the total laser intensity and pulse duration are kept constant.     

Structural, curvature and electronic properties of Rh adsorption on armchair single-walled carbon nanotube

This paper systematically studies the rolling effects of the (n, n) single-wall carbon nanotubes (SWCNT) with different curvatures on Rh adsorption behaviours by using density functional theory. The outside charge densities of SWCNTs are found to be higher than those inside, and the differences decrease with the increase of the tube radius. This electronic property led to the discovery that the outside adsorption energies are higher than the inside ones, and that the differences are reduced with the increase of the tube radius. Partial density of states and charge density difference indicate that these strong interactions induce electron transfer between Rh atoms and SWCNTs.     

An interconnect width and spacing optimization model considering scattering effect

As the feature size of the CMOS integrated circuit continues to shrink, the more and more serious scattering effect has a serious impact on interconnection performance, such as delay and bandwidth. Based on the impact of the scattering effect on latency and bandwidth, this paper first presents the quality-factor model which optimises latency and bandwidth effectively with the consideration of the scattering effect. Then we obtain the analytical model of line width and spacing with application of curve-fitting method. The proposed model has been verified and compared based on the nano-scale CMOS technology. This optimisation model algorithm is simple and can be applied to the interconnection system optimal design of nano-scale integrated circuits.