The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

作者姓名：	王鑫华赵妙刘新宇蒲颜郑英奎魏珂

作者单位：	Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

基金项目：	Project supported by the National Basic Research Program (973) of China (Grant No. 2010CB327500) and the National Natural Science Foundation of China (Grant Nos. 60976059 and 60890191).

摘要：

	点击此处可从《海洋学报(英文版)》浏览原始摘要信息
	点击此处可从《海洋学报(英文版)》下载全文