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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses |
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| Authors: | Hu Xiao-Long Zhang Jiang-Yong Shang Jing-Zhi Liu Wen-Jie and Zhang Bao-Ping |
| Institution: | Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China;Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China;Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China; Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005, China |
| Abstract: | This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer. |
| Keywords: | exciton-longitudinal-optical-phonon InGaN/GaN single quantum well GaN cap layer Huang-Rhys factor |
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