| Abstract: | The Ag2O film, as-deposited by direct-current magnetron reactive sputtering at a substrate temperature of 150 °C, clearly shows a preferential orientation (111), and is capable of lowering the threshold value of the thermal decomposition temperature to about 200 °C, which is helpful to its application in optical and magneto-optical storage. This paper fits its optical constants in terms of a general oscillator model by using measured ellipsometric parameters. The fitted oscillator energy 2.487 eV is close to the optical direct interband transition energy value of the Ag2O film determined by Tauc equation; whereas, the fitted oscillator energy 4.249 eV is far from the fitted plasma oscillator energy 4.756 eV by single-oscillator energy. The photoluminescence spectrum centred at about 2.31 eV indicates a direct-energy gap photoluminescence mechanism of the Ag2O film. |
