提高WC-Co合金基底沉积金刚石膜质量的研究

选用ＨＮＯ３对ＷＣ Ｃｏ（ＹＧ６）硬质合金表面进行刻蚀预处理。实验结果表明，用ＨＮＯ３对硬质合金基底表面进行选择性刻蚀，可以减少或消除Ｃｏ的负作用，增加基底表面粗糙度和比表面积，促成活性中心的形成，提供较多的有利于金刚石成核的位置，这是一种提高金刚石薄膜质量的有效预处理方法

AN IMPROVEMENT ON THE QUALITY OF CVD DIAMOND FILMS ON WC Co(YG6) SUBSTRATE

he authors adopt HNO 3 to etch the cemented carbide surface (WC Co) and find that HNO 3 is effective for preferentially etching Co atoms. It can reduce or remove Co negative function, enhance surface roughness and specific surface, and provide more nucleation points. It is an effective method to improve the quality of diamond films on WC Co substrate.