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Pb(Zr0.3Ti0.7)O3铁电薄膜激光感生电压效应
引用本文:朱杰,张辉,张鹏翔,谢康,胡俊涛.Pb(Zr0.3Ti0.7)O3铁电薄膜激光感生电压效应[J].海洋学报,2010,32(9):6417-6422.
作者姓名:朱杰  张辉  张鹏翔  谢康  胡俊涛
作者单位:昆明理工大学光电子新材料研究所, 昆明 650051;电子科技大学宽带光纤传输与通信网技术教育部重点实验室, 成都 610054;昆明理工大学光电子新材料研究所, 昆明 650051;昆明理工大学光电子新材料研究所, 昆明 650051;电子科技大学宽带光纤传输与通信网技术教育部重点实验室, 成都 610054;昆明理工大学光电子新材料研究所, 昆明 650051
基金项目:国家自然科学基金(批准号:60588502)资助的课题.
摘    要:采用脉冲激光沉积(PLD)技术在LaSrAlTaO3(LSATO),LaAlO3(LAO)和SrTiO3(STO)的单晶倾斜衬底上成功制备了Pb(Zr0.3Ti0.7)O3(PZT)薄膜,在三种倾斜衬底上生长的PZT薄膜中都首次发现了LIV效应.对PZT/LSATO薄膜在a,c轴两种不同取向择优生长下的LIV效应做了研究,发现在薄膜c轴取向择优生长

关 键 词:激光感生电压效应  铁电薄膜  薄膜生长取向  原子层热电堆
收稿时间:1/7/2008 12:00:00 AM

Laser-induced voltage effect in Pb(Zr0.3Ti0.7)O3 ferroelectric thin film
Zhu Jie,Zhang Hui,Zhang Peng-Xiang,Xie Kang and Hu Jun-Tao.Laser-induced voltage effect in Pb(Zr0.3Ti0.7)O3 ferroelectric thin film[J].Acta Oceanologica Sinica (in Chinese),2010,32(9):6417-6422.
Authors:Zhu Jie  Zhang Hui  Zhang Peng-Xiang  Xie Kang and Hu Jun-Tao
Institution:Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051,China;Key Lab of Broadband Optical Fiber Transmission of Communication Networks, University of Electronic Science and Technology of China,;Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051,China;Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051,China;Key Lab of Broadband Optical Fiber Transmission of Communication Networks, University of Electronic Science and Technology of China, Chengdu 610054,China;Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051,China
Abstract:Pb(Zr0.3Ti0.7)O3(PZT)thin films have been grown by pulsed laser deposition (PLD) on LaSrAlTaO3 (LSATO),LaAlO3(LAO) and SrTiO3(STO) single crystal vicinal cut substrates. Laser-induced voltage(LIV) effect was also found in PZT thin films grown on the three vicinal cut substrates for the first time. LIV signals increased with the single-pulse laser energy following the linear relation in case of c-axis orientation of thin film; but this linear relation was not followed obviously in case of a-axis orientation of thin film. This result shows that the LIV effect in PZT thin film is the atomic layer thermopile effect, in the which anisotropy of Seebeck coefficient plays an important role. Through realizing impedance-matching of thin films and transmission line, LITV signal response time has been optimized, the time of rising edge dropped from 60 ns to 26 ns, the full width at half maximum dropped from 260 ns to 38 ns.
Keywords:laser-induced voltage effect  ferroelectric thin films  orientation of thin film growth  atomic layer thermopile
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