强流脉冲电子束辐照诱发金属纯镍中的空位簇缺陷

利用强流脉冲电子束(high-current pulsed electron beam,HCPEB)技术对多晶纯Ni进行了辐照处理,采用透射电子显微镜详细分析了辐照诱发的缺陷结构.HCPEB辐照后,纯镍表层积聚了幅值极大的残余应力,沿{111}晶面形成了稠密的位错墙及孪晶结构,另外还形成了大量的包括位错圈、堆垛层错四面体(SFT)及孔洞在内的空位簇缺陷.SFT缺陷的数量远高于其他空位簇缺陷,其周围区域位错密度很低.孔洞缺陷主要出现在SFT密集区域.HCPEB瞬间的加热和冷却诱发的幅值极大的应力和极高的应变     

强流脉冲电子束作用下金属纯Cu的微观结构状态——空位簇缺陷及表面微孔结构

利用强流脉冲(HCPEB)电子束技术对多晶纯Cu进行了辐照处理,并利用透射电镜对HCPEB诱发的空位簇缺陷进行了表征.实验结果表明,HCPEP辐照金属可在纯Cu表层诱发大量的过饱和空位,并形成四方形空位胞及空位型位错圈和堆垛层错四面体(SFT),HCPEB瞬间的加热和冷却诱发的幅值极大的应力和极高的应变导致的整个原子平面的位移是空位簇缺陷形成的主要原因.此外,扫描电镜分析表明HCPEB辐照可以在纯Cu表面形成高密度、弥散分布和尺寸细小的微孔.过饱和空位或空位团簇沿晶体缺陷向表面扩散、凝聚是表面微孔形成的根     

基于准连续介质方法模拟纳米多晶体Ni中裂纹的扩展

通过准连续介质方法模拟了纳米多晶体Ni中裂纹的扩展过程.模拟结果显示:裂纹尖端的应力场可以导致晶界分解、层错和变形孪晶的形成等塑性形变;在距离裂纹尖端越远的位置,变形孪晶越少;在裂纹尖端附近相同距离处,层错要远多于变形孪晶.这反映了局部应力的变化以及广义平面层错能对变形孪晶的影响.计算了裂纹尖端附近区域原子级局部静水应力的分布.计算结果表明:裂纹前端晶界处容易产生细微空洞,这些空洞附近为张应力集中区,并可能促使裂纹沿着晶界扩展.模拟结果定性地反映了纳米多晶体Ni中的裂纹扩展过程,并与相关实验结果符合得很好     

退火对B掺杂纳米金刚石薄膜微结构和电化学性能的影响

采用热丝化学气相沉积法制备B掺杂纳米金刚石薄膜,并对薄膜进行真空退火处理,系统研究了不同退火温度对B掺杂纳米金刚石薄膜的微结构和电化学性能的影响.结果表明,当退火温度升高到800 ℃后,薄膜的Raman谱图中由未退火时在1157,1346,1470,1555 cm^-1处的4个峰转变为只有D峰和G峰,说明晶界上的氢大量解吸附量减少;并且D峰和G峰的积分强度比I_D/I_G值变为最小,即sp²相团簇     

稀土钇、镧掺杂TiO2薄膜的拉曼谱分析

采用溶胶-凝胶法在石英玻璃衬底上用旋涂法制备了未掺杂、掺杂钇和掺杂镧的TiO₂薄膜样品,对样品在700—1100 ℃范围内进行退火处理,并对样品的拉曼光谱进行了分析.分析表明:随着退火温度的升高,未掺杂TiO₂薄膜发生了从锐钛矿相经混相最终向金红石相的转换,掺杂钇和掺杂镧对TiO₂薄膜的晶相转换起阻碍作用,掺杂镧的阻碍作用更强;稀土掺杂能使TiO₂薄膜晶粒细化,并使晶粒内部应力增大从而阻碍晶格振动,掺杂镧比掺杂钇的效果     

Cu2+/SnO2复合纳米光催化剂的制备及其对海洋柴油污染物的降解

采用化学沉淀法成功制备了Cu2+/SnO2复合纳米光催化剂,采用XRD、SEM等测试手段对复合纳米光催化剂的粒径、形态等进行表征。在紫外光条件下,分别改变催化剂掺杂比、催化剂煅烧温度、催化剂投加量、柴油初始含量和光照时间等单因素,探究不同条件对Cu2+/SnO2复合纳米光催化剂降解海洋柴油污染物的影响。结果表明,自制复合纳米光催化剂可以有效降解海水中的柴油污染物,在紫外光作用下,于400℃下煅烧Cu/Sn掺杂比为0. 03的Cu2+/SnO2复合纳米光催化剂、投加量为0. 2 g/dm3、柴油初始含量为0. 15 g/dm3、H2O2溶液含量为0. 2 g/dm3、溶液的p H为7、光照时间3 h时效果最好,海水中柴油的去除率最高,达到86. 98%。Cu2+/SnO2复合纳米光催化剂用聚丙烯纳米球负载后可以实际应用于海洋中,便于回收。     

海水中-氧化氮的化学发光法测定

基于鲁米诺-H2O2混合溶液作为发光液与海水中NO发生反应产生发光信号的原理,提出了一种测定海水中痕量NO的化学发光法.确定了化学发光法测定NO的最佳条件:pH9.2、浓度1×10-2 mol/dm3的碳酸盐为缓冲体系,鲁米诺浓度为8.4×10-5 mol/dm3,H2O2浓度为1×10-2 mol/dm3,测定温度为...     

In掺杂对n型方钴矿化合物的微结构及热电性能的影响规律

用熔融退火法结合放电等离子烧结(SPS)技术成功制备了具有不同 In含量的In_xCo₄Sb₁₂(x=0.1—0.4)方钴矿化合物.X射线衍射分析和扫描电镜分析结果表明,当In的掺杂量超过一定值时,化合物中会原位析出纳米InSb的第二相,且其含量会随In掺杂量的增加而增大.研究结果表明,InSb第二相的存在增大了化合物的功率因子,降低了化合物的晶格热导率,显著提高了化合物的热电性能.在温度为800 K时,In相似文献   

HT-7 Tokamak离子回旋波和低杂波等离子体逃逸电子行为研究

HT-7 Tokamak拥有离子回旋波(ICRF)和低杂波(LHW)两套加热系统.ICRF主要对加热离子有比较好的加热效果,LHW则主要是通过电子Landau阻尼加热电子.除此之外,在ICRF和LHW协同加热的条件下,可以对等离子体产生更有效的加热效果,增加等离子体的聚变反应截面,增加聚变中子产额.本文报道了LHW对改善ICRF和等离子体耦合的重要作用,ICRF和LHW加热等离子体中电子温度随时间的演化过程;计算了放电过程中电子逃逸的阈值能量,分析了逃逸电子的产生过程,以及放电过程中的中子产额.研究结果发     

顺序扫描 ICP-AES法测定高纯石墨灰分中14种杂质金属元素的方法研究

本文研究了快速测定石墨灰分中14种杂质元素Al,Ca,Cd,Co,Cr,Cu,Fe,Mg,Mn,Mo,Ni,Ti,V,Zn的分析方法,以满足提纯石墨研究工作对快速了解石墨提纯效果的要求.依据测定样品中各元素的含量情况,实验选择14种元素的分析线.运用ICP-AES谱线轮廓图功能,消除常量元素产生的基体背景干扰.运用干扰系数法进行测定结果校正,并对ICP-AES测定灰分中14种元素的检出线、精密度、准确度进行了测定.结果显示,本方法分析石墨灰分中杂质元素能够满足提纯石墨研究工作的要求.     

Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

With annealing temperature kept at 1573 K, the effects of annealing time on stability of the intrinsic defects in epitaxial unintentionally doped 4H-SiC prepared by low pressure chemical vapour deposition have been studied by electron spin resonance (ESR) and low temperature photoluminescence. This paper reports the results shown that annealing time has an important effect on the intrinsic defects in unintentionally doped 4H-SiC when annealing temperature kept at 1573 K. When the annealing time is less than 30 min, the intensity of ESR and photoluminescence is increasing with annealing time prolonged, and reaches the maximum when annealing time is 30 min. Then the intensity of ESR and photoluminescence is rapidly decreased with the longer annealing time, and much less than that of as-grown 4H-SiC when annealing time is 60 min, which should be related with the interaction among the intrinsic defects during the annealing process.     

Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO2 matrix

Photoluminescence (PL) spectra of Si nanocrystals (NCs) prepared by 130 keV Si ions implantation onto SiO₂ matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect (QCE) and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds (DBs) on Si NCs was also investigated. For hydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 10¹⁷ ions /cm² is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.     

掺Ga对ZnO电子态密度和光学性质的影响

采用密度泛函理论下的第一性原理平面波赝势方法,研究了掺Ga对纤锌矿ZnO电子态密度和光学性质的影响.从晶体配位场理论分析了掺Ga前后ZnO的成键情况及态密度的变化.计算得到掺Ga后电子浓度为2.42×10²¹ cm^-3,ZnO的载流子浓度提高了10⁴倍.比较分析掺Ga前后ZnO的介电函数、复折射率、吸收光谱和反射光谱可得,ZnO光吸收边向高能端移动,光学带隙增大.在可见光区,ZnO光吸收系数与反射率减小,光透过率显著提高,使ZnO:Ga成为     

An analytical threshold voltage model for dual-strained channel PMOSFET

Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si_1-xGe_x/relaxd Si_1-yGe_y(s-Si/s-SiGe/Si_1-yGe_y) metal--oxide--semiconductor field-effect transistor (PMOSFET), analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel (tensile strained Si), because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si_1-yGe_y metal-oxide-semiconductor field-effect transistor (MOSFET) designs.     

Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O₂, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.     

Variations of zooplankton metabolism and feeding in the frontal area of the Alboran Sea (western Mediterranean) in winter

Respiration, excretion (NH₄ and PO₄) and feeding of zooplankton from the upper 200 m of the Almeria–Oran frontal region (western Mediterranean), were studied during winter 1997. Eight sites belonging to the three main hydrodynamic structures of the area (Mediterranean water, geostrophic Atlantic jet and associated anticyclonic gyre) were considered. Lowest values of respiration, PO₄ excretion, O/P atomic ratio and particle ingestion were found in Mediterranean waters. At the frontal limit, respiration and ammonium excretion were enhanced compared to the adjacent structures (Mediterranean water and Atlantic jet). In the gyre water, lowest O/N and highest N/P values were observed and maximum faecal pellet production and reproduction activity (inferred from the proportion of nauplii in plankton) were recorded. Selectivity was observed for feeding with respect to particular spectra. At the front and in the jet, large particles (> 20 μm), were preferred, while medium- and small-sized particles were mainly used for food at the gyre and in Mediterranean water. As the bulk of zooplankton components was the same at all the stations, physiological variations were interpreted as adaptive processes to qualitative and quantitative changes in the food resource, i.e. Mediterranean scarcity and Atlantic water richness, “new production” of diatoms at the front limit, enhancement of the microbial food chain at the gyre and in Mediterranean waters. The maximum proportion of copepod nauplii observed at the gyre could result, either from an isopycnal transport from the front, of larvae issued from eggs produced at the frontal limit, or from a local enhancement of copepod reproductive activity induced by the favourable food conditions prevailing at the gyre, as suggested by the increase of faecal production.     

Neutron activation analysis(NAA) and geochemical studies of 38 elements in surface sediments from lower reach and estuary of Huanghe(Yellow) River

Using a neutron activation analysis technique, which involves gamma-spectrometry with a Ge(Li) detector coupled to a S40 multichannel analyzer and interfaced to a PDP-11 computer, we determined thirty-eight elements in sediments from the lower reach (downstream from Jinan) and estuary of Huanghe. The results are discussed in this paper.From inter-elemental correlations, it ts found that a large number of metals (Mn.As, Co, Cr.Cs, Rb, Sc, Ti, Ta, V and Zn) correlate positively with Fe. Ba and Ca correlate positively with Al. Whereas some elements (e. g. , Ti and lanthanides) show no correlation with either Fe or Al. On the other hand, Hf and Zr show a negative correlation with Fe. Elements which tend to be scavenged by Fe and Al colloids or suspended particles are enriched in sediments at the Huanghe Estuary relative to its lower reach. On the other hand, the contents of some elements (e. g. , Zr,Hf,U, Ba, etc. )are higher in sediments from the lower reach of Huanghe than in the estuarine sediments,which     

Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

An experimental study on the photocarrier radiometry signals of As⁺ ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose (1×10¹¹--1×10¹⁶/cm²), implantation energy (20--140 keV) and subsequent isochronical annealing temperature (500--1100 du are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.     

Structure and Stability of Non-Transform Discontinuities on the Mid-Atlantic Ridge between 24° N and 30° N

Observations of the median valley within the 24–30° N area ofthe Mid-Atlantic Ridge (MAR), using the IOSDL high resolutionside-scan sonar instrument TOBI, image four separate areas of themedian valley, containing part or all of nine spreading segments, and fivenon-transform discontinuities between spreading segments (NTDs).These high resolution side scan images were interpreted in parallel withmultibeam bathymetry (Purdy et al., 1990), giving a greater degree ofstructural precision than is possible with the multibeam data alone. Threedistinct types of NTD were identified, corresponding in part to typespreviously identified from the multibeam bathymetric survey of the area.Type 1 NTDs are termed septal offsets, and are marked by a topographic ridgeseparating the two spreading segments. The offset between the spreadingsegments ranges from 9 to 14 km. These can be further subdivided into Type1A in which the septa run parallel to the overall trend of the MAR and Type1B in which the septa lie at a high angle to the bulk ridge trend. Type 1ANTDs are characterised by overlap of the neovolcanic zones of the segmentson each side, and strong offaxis traces, while Type 1B NTDs show no overlapof neovolcanic zones, and weak offaxis traces. Type 2 NTDs arebrittle/ductile extensional shear zones, marked by oblique extensionalfractures, and associated with rotation of tectonic and volcanic structuresaway from the overall trend of the MAR. Type 3 NTDs are associated withoffsets of less than 5 km, and show no sign of any accommodating structure.In this type of NTD, the offset zone is covered with undeformed volcanics.The type of NTD developed at any locality along the ridge axis appears todepend on the amount of segment offset and segment overlap, the overalltrend of the mid-ocean ridge, the width of the zone of discontinuity, themedian valley offset and the longevity of the offset. These factorsinfluence the mechanical properties of the lithosphere across thediscontinuity, and ultimately the tectonic style of the NTD that can besupported. Thus brittle/ductile extensional shear zones are long-livedstructures favoured by large segment offsets, and small or negative segmentoverlaps. Septa can be short or long lived, and are associated with largesegment offsets. Segment overlaps vary from negative (an along axis gap) tozero, for Type 1B septal offsets, or positive to zero for Type 1A septaloffsets. Non-tectonised NTDs are generally short lived structures,characterised by small segment offsets and zero or positive overlaps.     

相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究

采用射频磁控溅射方法制备了两种用于相变存储器的Ge₁Sb₂Te₄和Ge₂Sb₂Te₅相变薄膜材料,对其结构、电学输运性质和恒温下电阻随时间的变化关系进行了比较和分析.X射线衍射(XRD)和原子力显微镜(AFM)的结果表明:随着退火温度的升高,Ge₁Sb₂Te₄薄膜逐步晶化,由非晶态转变为多晶态,表面出现均匀的、