冻土单轴蠕变过程中结构变化的CT动态监测

doi:10.7522/j.issn.1000-0240.1996.0045

PDF(319 KB)

冰川冻土 ›› 1996, Vol. 18 ›› Issue (4) : 306-311. DOI: 10.7522/j.issn.1000-0240.1996.0045 CSTR: 32264.14.j.issn.1000-0240.1996.0045

研究论文

冻土单轴蠕变过程中结构变化的CT动态监测

吴紫汪, 马巍, 蒲毅彬, 常小晓

作者信息 +

Monitoring the Change of Structures in Frozen Soil in Uniaxial Creep Process by CT

Wu Ziwang, Ma Wei, Pu Yibin, Chang Xiaoxiao

Author information +

文章历史 +

摘要

CT为岩土材料非破坏的持续检测和内部结构的定量描述提供了可能,利用这一手段观测分析了冻土单轴蠕变过程中结构的变化情况,结果表明蠕变过程中结构缺陷的增生与扩展制约着土的结构的强化与弱化作用,控制着蠕变过程形态特征。易破坏区首先发生于样品的低密段,在软弱段的某一薄弱层面形成一环状低密带,然后向外扩展,最终导致整体结构的破坏。

Abstract

CT provides a possibility for both non-destructive and continuous measurement of materials(rocks and soil etc)and quantitative description of internal structures. In this paper, CT is used to monitor and analyze the change of structures in frozen soil in uniaxial creep process. It is found that the strengthening and softening actions of structures in frozen soil are controlled by the initiation and growth of structural defefcts, which govern the characteristics of creep process. The breaking appears firstly in the weakened area with low density with-in the sample. Aring-like zone with low density is found in a weakened layer within the sample and then extends outwards to result in integral failure of the structure at last.

导出引用

吴紫汪, 马巍, 蒲毅彬, 常小晓. 冻土单轴蠕变过程中结构变化的CT动态监测[J]. 冰川冻土, 1996, 18(4): 306-311 https://doi.org/10.7522/j.issn.1000-0240.1996.0045

Wu Ziwang, Ma Wei, Pu Yibin, Chang Xiaoxiao. Monitoring the Change of Structures in Frozen Soil in Uniaxial Creep Process by CT[J]. Journal of Glaciology and Geocryology, 1996, 18(4): 306-311 https://doi.org/10.7522/j.issn.1000-0240.1996.0045

参考文献

[1] 吴紫汪,马巍.1994.冻土强度与蠕变.兰州大学出版社,141～148.
[2] 吴紫汪,蒲毅彬等.1995.冻土蠕变过程中体积变化的CT分析.冰川冻土,17(增刊):41～46.
[3] 蒲毅彬,吴紫汪等.1994.CT在岩土实验中的数值分析.CT理论与应用研究.3(3):8～12.
[4] 蒲毅彬,吴紫汪等.1995.冻土CT实验的数学方程.冰川冻土,17(增刊):136～140.
[5] Pu Yibin.1993.The introducyion of application methods for CT in frozen soil experimental research.6th Int.Conf. on Permafrost.South China University of Technology Press.Vol.2,1 208～1 210.